Technical Name External Field-Free Spin-Orbit Torque Magnetic Random Access Memory
Project Operator National Tsing Hua University
Project Host 賴志煌
STT-MRAM: scaling down (submicron scale) along with issues of magnetic propertyintegration with semiconductor processing.
SOT-MRAM: fundamental understanding on mechanism, integration with STT-MRAMCMOS for readout.
VCMA-MRAM: understand the mechanism behind the observable VCMA phenomenon, integration with other RAMs for write/read.
Scientific Breakthrough
50 nm STT-MRAM on 28nm CMOS has been done with thermal stability above 350 ℃.
8x8 STT-MRAM arrays with independent write/read capability.
Micromagnetic simulation for boosting the switching efficiency.
Failure analysis for increasing the life of device.
New SOT-MRAM system based on antiferromagnet with higher magnetic stability.
Industrial Applicability
For the purpose of low-power consumption, intelligent,novel sensing, spintronics-based MRAM definitely plays an important role. This proposal aims at integrating all the research resources regarding MRAMencouraging the research group devoting to studying MRAM-correlated projects. An advanced platform for MRAM processing, analysis,design will be developed.
Keyword MRAM Spin-transfer torque Spin-orbit torque Voltage control magnetic anisotropy Magnetic tunneling junction Perpendicular magnetic anisotropy Tunneling magneto-resistance Tilted IBE Complementary Metal-Oxide-Semiconductor Memory
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